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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP131 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 4A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 4A *Complement to Type TIP136 APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Collector Power Dissipation @Ta=25 Junction Temperature Storage Temperature Range VALUE 80 80 5 8 12 0.3 70 UNIT V V V A A A PC W 2 150 -65~150 Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.785 63.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP131 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA B 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 2.5 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 40V, IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 500 hFE-2 DC Current Gain IC= 4A; VCE= 4V 1000 15000 isc Websitewww.iscsemi.cn |
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